Infineon
GaN HEMT – Gallium Nitride Transistor
Infineon
IGO60R042D1AUMA2
The IGO60R042D1 enables more compact topologies and increased efficiency at higher frequency operation.It is certified through an extensive GaN-specific qualification process, exceeding industry standards.Housed in the bottom-side cooled DSO-20-85 package, it is designed for optimal power dissipation required in modern data centers, server, telecom renewables, and numerous other applications.
Request Model
Infineon
IGO60R070D1AUMA2
The IGO60R070D1 enables more compact topologies and increased efficiency at higher frequency operation.It is certified through an extensive GaN-specific qualification process, exceeding industry standards.Housed in the leaded SMD DSO-20-85 package, it is designed for optimal power dissipation required in modern data centers, server, telecom, renewables, and numerous other applications.
Request Model
Infineon
IGOT60R042D1AUMA2
This product is not recommended for new designs. Please explore its successor IGOT65R035D2.The IGOT60R042D1 enables more compact topologies and increased efficiency at higher frequency operation.It is certified through an extensive GaN-specific qualification process, exceeding industry standards.Housed in the leaded SMD DSO-20-87 package, it is designed for optimal power dissipation required in modern data centers, server, telecom, renewables, and numerous other applications.
Request Model
Infineon
IGOT60R070D1AUMA1
This product is not recommended for new designs. Please explore its successor IGLD65R055D2.The IGOT60R070D1 enables more compact topologies and increased efficiency at higher frequency operation.It is certified through an extensive GaN-specific qualification process, exceeding industry standards.Housed in the leaded SMD DSO-20-87 package, it is designed for optimal power dissipation required in modern data centers, server, telecom, renewables, and numerous other applications.
Request Model
Infineon
IGOT60R070D1AUMA3
This product is not recommended for new designs. Please explore its successor IGLD65R055D2.The IGOT60R070D1 enables more compact topologies and increased efficiency at higher frequency operation.It is certified through an extensive GaN-specific qualification process, exceeding industry standards.Housed in the leaded SMD DSO-20-87 package, it is designed for optimal power dissipation required in modern data centers, server, telecom, renewables, and numerous other applications.
Request Model
Infineon
IGOT65R025D2AUMA1
The IGOT65R025D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a top-side cooled DSO package, it is designed for optimal power dissipation in various industrial applications.
Request Model
Infineon
IGOT65R035D2AUMA1
The IGOT65R035D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a top-side cooled DSO package, it is designed for optimal power dissipation in various industrial applications.
Request Model
Infineon
IGOT65R045D2AUMA1
The IGOT65R045D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a top-side cooled DSO package, it is designed for optimal power dissipation in various industrial applications.
Request Model
Infineon
IGOT65R055D2AUMA1
The IGOT65R055D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a top-side cooled DSO package, it is designed for optimal power dissipation in various industrial applications.
Request Model
Infineon
IGT60R042D1ATMA1
This product is not recommended for new designs. Please explore its successor IGT65R035D2The IGT60R042D1 enables more compact topologies and increased efficiency at higher frequency operation.It is certified through an extensive GaN-specific qualification process, exceeding industry standards.Housed in the bottom-side cooled HSOF-8 package, it is designed optimal power dissipation required in modern data centers, server, telecom, renewables and numerous other applications.
Request Model