The IGB070S0S1 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.

The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.

The IGB110S10S1 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.

The IGB019S06S1 is a 60 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its very low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.

The IGC025S08S1 is a 80 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its very low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.

The IGC033S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.

The IGC033S10S1 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.

The IGC037S12S1 is a 120 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its very low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.

The IGC090S20S1 is a 200 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its very low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.

IGI60F1414A1L combines a half-bridge power stage consisting of two 140 mΩ (typ. RDS(on)) / 600V enhancement mode CoolGaN™ HEMT with dedicated gate drivers in a small 8x8 mm QFN-28 package.It is thus ideally suited to support the design of high density AC-DC charger and adapters utilizing the superior switching behavior of CoolGaN™ power switches. Infineon’s CoolGaN™ and related power switches provide a very robust gate structure. When driven by a continuous gate current of a few mA in the “on” state, a minimum on-resistance RDS(on) is always guaranteed, independent of temperature and parameter variations.The driver utilizes on-chip coreless transformer technology (CT) to achieve signal level-shifting to the high-side. Further, CT guarantees robustness even for extremely fast switching transients above 300V/ns.