The IGLT65R035D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.

This product is not recommended for new designs. Please explore its successor IGLD65R140D2The IGLD60R190D1 offers fast turn-on and turn-off speed, minimum switching losses and enables simple half-bridge topologies with the highest efficiency.It is certified through an extensive GaN-specific qualification process, exceeding industry standards.Housed in the bottom-side cooled LSON-8 (DFN 8x8) package, it enables ideal power disspation as required in modern USB-C adapter and chargers, or server and data center applications.

This product is not recommended for new designs. Please explore its successor IGLR65R270D2The IGLR60R340D1 enables more compact topologies and increased efficiency at higher frequency operation.It is certified through an extensive GaN-specific qualification process, exceeding industry standards.Housed in the leadless TSON-8 (ThinPAK 5x6) package with a height of 1 mm only, it is perfect for achieving highest power density in low-power switched mode power supplies, such as USB-C adapters and chargers.

This product is not recommended for new designs. Please explore its successor IGLR65R140D2The IGLR60R190D1 enables more compact topologies and increased efficiency at higher frequency operation.It is certified through an extensive GaN-specific qualification process, exceeding industry standards.Housed in the leadless TSON-8 (ThinPAK 5x6) package with a height of 1 mm only, it is perfect for achieving highest power density in low-power switched mode power supplies, such as USB-C adapters and chargers.

This product is not recommended for new designs. Please explore its successor IGT65R055D2The IGT60R070D1 enables a more compact topology and higher efficiency at higher frequency operation.It is certified through an extensive GaN-specific qualification process, exceeding industry standards.Housed in the bottom-side cooled HSOF-8 (TO-leadless) package, it is designed for optimal power dissipation required in modern data centers, server, telecom, renewables and numerous other applications.

The GS-065-004-1-L-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS-065-004-1-L-TR is a bottom-side cooled transistor in a 5×6 mm PDFN package that enables ideal power disspation as required in modern USB-C adapter and chargers, or other low power applications.

The GS-065-004-6-L is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.

The GS-065-008-1-L-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS-065-008-1-L-TR is a bottom-side cooled transistor in a 5×6 mm PDFN package that enables ideal power disspation as required in modern USB-C adapter and chargers, or other low power applications.

The GS-065-008-6-L is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.

The GS-065-011-1-L-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS-065-011-1-L-TR is a bottom-side cooled transistor in a 5x6 mm PDFN package that enables ideal power disspation as required in modern USB-C adapter and chargers, or other moderate power applications.