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GaN HEMT – Gallium Nitride Transistor
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IGLD65R110D2AUMA1
The IGLD65R110D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.
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IGLD65R140D2AUMA1
The IGLD65R140D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.
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IGLR60R260D1XUMA1
This product is not recommended for new designs. Please explore its successor IGLR65R200D2The IGLR60R260D1 enables more compact topologies and increased efficiency at higher frequency operation.It is certified through an extensive GaN-specific qualification process, exceeding industry standards.Housed in the leadless TSON-8 (ThinPAK 5x6) package with a height of 1 mm only, it is perfect for achieving highest power density in low-power switched mode power supplies, such as USB-C adapters and chargers.
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IGLR65R140D2XUMA1
The IGLR65R140D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer and industrial applications with slim form factors.
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IGLR65R200D2XUMA1
The IGLR65R200D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.
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IGLR65R270D2XUMA1
The IGLR65R270D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.
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IGLT65R025D2AUMA1
The IGLT65R025D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.
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IGLT65R045D2ATMA1
The IGLT65R045D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.
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IGLT65R055D2ATMA1
The IGLT65R055D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.
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IGLT65R110D2ATMA1
The IGLT65R110D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.
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