The GS-065-008-1-L-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS-065-008-1-L-TR is a bottom-side cooled transistor in a 5×6 mm PDFN package that enables ideal power disspation as required in modern USB-C adapter and chargers, or other low power applications.

The GS-065-008-6-L is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.

The GS-065-011-1-L-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS-065-011-1-L-TR is a bottom-side cooled transistor in a 5x6 mm PDFN package that enables ideal power disspation as required in modern USB-C adapter and chargers, or other moderate power applications.

The GS-065-011-2-L-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS-065-011-2-L-TR is a bottom-side cooled transistor in a 8x8 mm PDFN package that enables ideal power disspation as required in modern USB-C adapter and chargers, or other moderate power applications.

The GS-065-011-6-LR is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.

The GS-065-011-6-L is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.

The GS-065-014-6-LR is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.

The GS-065-014-6-L is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.

The GS-065-018-2-L-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS-065-018-2-L-TR is a bottom-side cooled transistor in a 8x8 mm PDFN package that enables ideal power disspation as required in modern USB-C adapter and chargers, or server and data center applications.

The GS-065-018-6-LR is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.