1. Infineon
  2. Power
  3. GaN HEMT – Gallium Nitride Transistor

Infineon GS0650186LRTRXUMA1

The GS-065-018-6-LR is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.
Built by Infineon

The CAD models below were provided for download to Ultra Librarian by Infineon. All CAD formats may not be available.

Symbol

No Preview Available

Footprint

No Preview Available

3D Model

No 3D Model Available

Free Online PCB CAD Library

Welcome to the worlds largest verified PCB CAD library.

Access our free library containing millions of symbols, footprints, and 3D models from manufacturers such as TI, Analog Devices, TE, Maxim, Power Integrations, and more.