The BGSX33M5U16 RF CMOS switch is specifically designed for LTE and 5G antenna applications. This 3P3T cross-switch offers low insertion loss and low harmonic generation.The switch is controlled via a MIPI RFFE control interface. The on-chip controller allows power-supply voltages from 1.65 to1.95 V. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The device has a very small size of only 2.0 mm x 2.0 mm and a thickness of 0.6 mm.

The BGSX44MU18 RF CMOS switch is specifically designed for LTE and 5G FR1 four-antenna applications. This 4P4T cross-switch offers low insertion loss and low harmonic generation.The switch is controlled via a MIPI RFFE control interface. The on-chip controller allows power-supply voltages from 1.65 to1.95 V. The switch features direct-connect-to-battery functionality and DC-free RF ports.Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The device has a very small size of only 2.0 mm x 2.4 mm and a thickness of 0.63 mm.

The BGSX22G6U10 RF CMOS switch is specifically designed for GSM, WCDMA, LTE and 5G applications. This DPDT offers very low insertion loss even at high frequencies of up to 7.125GHz, low harmonic generation along with high isolation between RF ports. In addition, the fast switching speed enables 5G-SRS applications.The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.6V-3.6V.BGSX22G6U10 features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The device has a very small size of only 1.1 mm x 1.5 mm and thickness of 0.60mm.

The BGSX22G5A10 RF MOS switch is specifically designed for LTE and WCDMA multi antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.65V to 3.4V.The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGSX22G5A10 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 1.1 x 1.5mm2 and a maximum thickness of 0.55 mm.

The BGSX24M2U16 RF CMOS switch is specifically designed for LTE and 5G antenna applications. This Dual Pole Four Throw (DP4T) cross-switch offers low insertion loss and low harmonic generation.The switch is controlled via a MIPI RFFE control interface. The on-chip controller permits very low power-supply voltage from 1.1 to 1.3 V or the standard supply voltage from 1.65 to 1.95V. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The device has a very small size of only 2.0 mm x 2.0 mm and a thickness of 0.6 mm.

The BGSX24MU16 RF CMOS switch is specifically designed for LTE and WCDMA quadruple antenna applications. This DP4T offers low insertion loss and low harmonic generation. The switch is controlled via a MIPI RFFE controller. The on-chip controller allows power-supply voltages from 1.65 to 1.95 V.The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGSX24MU16 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 2.0 x 2.0 mm2 and a maximum thickness of 0.59 mm.