Infineon
RF Mixer and Detector Schottky Diode
Infineon
BAT1704WH6327XTSA1
These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for overvoltage protection. Their low barrier height, small forward voltage and low junction capacitance, make BAT17-04W a suitable choice for mixer and detector applications at frequencies as high as 6 GHz.
Models Available
Infineon
BAT15099RE6327HTSA1
This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-099R a suitable choice for mixer functions in applications which frequencies are as high as 12 GHz.
Models Available
Infineon
BAT1504WH6327XTSA1
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-04W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
Models Available
Infineon
BAT1503WE6327HTSA1
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-03W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
Models Available
Infineon
BAT1502ELE6327XTMA1
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02EL a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
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Infineon
BAT1502ELSE6327XTSA1
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02ELS a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
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