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Infineon


RF Mixer and Detector Schottky Diode

Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT24 - 02LS a suitable choice for mixer and detector functions in applications whose frequencies are as high as 24 GHz
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Silicon Schottky Diodes
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Silicon Schottky Diodes
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