Infineon
RF Mixer and Detector Schottky Diode
Infineon
BAT1502LRHE6327XTSA1
Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT 15 - 02 LRH a suitable choice for mixer and detector functions in applications whose frequencies are as high as 12 GHz.
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Infineon
BAT1502LSE6327XTSA1
Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT 15 - 02 LS a suitable choice for mixer and detector functions in applications whose frequencies are as high as 12 GHz.
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Infineon
BAT1502LSE6433XTMA1
Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT 15 - 02 LS a suitable choice for mixer and detector functions in applications whose frequencies are as high as 12 GHz.
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Infineon
BAT1504RE6152HTSA1
This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-04R a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
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Infineon
BAT15099E6327HTSA1
This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-099 a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
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Infineon
BAT2402ELSE6327XTSA1
This Infineon RF Schottky Diode is a silicon low barrier N-type device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT24-02ELS a suitable choice for mixer and detector functions in applications with frequencies are as high as 24 GHz.
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