1. Manufacturers
  2. Infineon
  3. RF
  4. RF Diode
  5. RF Mixer and Detector Schottky Diode

Infineon


RF Mixer and Detector Schottky Diode

Silicon Schottky Diodes
Models Available
Silicon Schottky Diodes
Models Available
Silicon Schottky Diodes
Models Available
Silicon Schottky Diodes
Models Available
These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for overvoltage protection. Their low barrier height, small forward voltage and low junction capacitance, make BAT17-04W a suitable choice for mixer and detector applications at frequencies as high as 6 GHz.
Models Available
This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-099R a suitable choice for mixer functions in applications which frequencies are as high as 12 GHz.
Models Available
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-04W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
Models Available
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-03W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
Models Available
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02EL a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
Request Model
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02ELS a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
Request Model