IGI60F2020A1L combines a half-bridge power stage consisting of two 200 mΩ (typ. RDS(on)) / 600 V enhancement mode CoolGaN™ HEMT with dedicated gate drivers in a small 8 x 8 mm QFN-28 package.It is thus ideally suited to support the design of high density AC-DC charger and adapters utilizing the superior switching behavior of CoolGaN™ power switches. Infineon’s CoolGaN™ and related power switches provide a very robust gate structure. When driven by a continuous gate current of a few mA in the “on” state, a minimum on-resistance RDS(on) is always guaranteed, independent of temperature and parameter variations.The driver utilizes on-chip coreless transformer technology (CT) to achieve signal level-shifting to the high-side. Further, CT guarantees robustness even for extremely fast switching transients above 300 V/ns.

IGI60F2727A1L combines a half-bridge power stage consisting of two 270 mΩ (typ. RDS(on)) / 600 V enhancement mode CoolGaN™ HEMT with dedicated gate drivers in a small 8 x 8 mm QFN-28 package.It is thus ideally suited to support the design of high density AC-DC charger and adapters utilizing the superior switching behavior of CoolGaN™ power switches. Infineon’s CoolGaN™ and related power switches provide a very robust gate structure. When driven by a continuous gate current of a few mA in the “on” state, a minimum on-resistance RDS(on) is always guaranteed, independent of temperature and parameter variations.The driver utilizes on-chip coreless transformer technology (CT) to achieve signal level-shifting to the high-side. Further, CT guarantees robustness even for extremely fast switching transients above 300 V/ns.

IGI60F5050A1L combines a half-bridge power stage consisting of two 500 mΩ (typ. RDS(on)) / 600 V enhancement mode CoolGaN™ HEMT with dedicated gate drivers in a small 8 x 8 mm QFN-28 package.It is thus ideally suited to support the design of high density AC-DC charger and adapters utilizing the superior switching behavior of CoolGaN™ power switches. Infineon’s CoolGaN™ and related power switches provide a very robust gate structure. When driven by a continuous gate current of a few mA in the “on” state, a minimum on-resistance RDS(on) is always guaranteed, independent of temperature and parameter variations.The driver utilizes on-chip coreless transformer technology (CT) to achieve signal level-shifting to the high-side. Further, CT guarantees robustness even for extremely fast switching transients above 300 V/ns.

IGI60L2727B1M combines a half-bridge power stage consisting of two CoolGaN™ Transistors 600 V / 270 mΩ (RDS(on) typ.) with an integrated level-shift gate driver and a bootstrap diode in a small 6x8 mm TFLGA-27 package.

The IGI60L5050A1M combines a half-bridge power stage consisting of two GaN HEMTs with level shifters in a small 6 x 8 mm PG-TFLGA-27-2 package. The device uses the Infineon CoolGaNTM GIT which offers the highest Figure-of-Merit (FOM) and robustness. The internal bootstrap diode means that with minimal external components, designers can achieve full control to tune the rise/fall times while maintaining a simple system BOM. This is ideally suited to support the design of compact appliances in the low power applications.

The IGK080B041S is a 40 V normally-off bidirectional power transistor housed in a small WLCSP 1.7x1.7 package, enabling high power density designs. Thanks to its very low on-state resistance, it is the ideal choice for reliable performance in demanding applications requiring bidirectional blocking capability such as load switch.

This product is not recommended for new designs. Please explore its successor IGLD65R055D2.The IGLD60R070D1 offers fast turn-on and turn-off speed, minimum switching losses and enables simple half-bridge topologies with highest efficiency.It is certified through an extensive GaN-specific qualification process, exceeding industry standards.Besides telecom and server SMPS, data centers as well as USB-C adapters and chargers, this device perfectly addresses applications that demand highest efficiency or power density.

The IGLD60R190D1S enables more compact topologies at higher efficiency and higher frequency operation.It is certified through an extensive GaN-specific qualification process, exceeding industry standards.Housed in the bottom-side cooled LSON-8 (DFN 8x8) package, it enables ideal power disspation as required in contemporary USB-C adapters and chargers.

The IGLD65R055D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.

The IGLD65R080D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.