1. Infineon
  2. Power
  3. GaN HEMT – Gallium Nitride Transistor

Infineon IGLD60R070D1AUMA3

This product is not recommended for new designs. Please explore its successor IGLD65R055D2.The IGLD60R070D1 offers fast turn-on and turn-off speed, minimum switching losses and enables simple half-bridge topologies with highest efficiency.It is certified through an extensive GaN-specific qualification process, exceeding industry standards.Besides telecom and server SMPS, data centers as well as USB-C adapters and chargers, this device perfectly addresses applications that demand highest efficiency or power density.
Built by Infineon

The CAD models below were provided for download to Ultra Librarian by Infineon. All CAD formats may not be available.

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