1. Infineon
  2. Power
  3. GaN HEMT – Gallium Nitride Transistor

Infineon IGI60F2727A1LAUMA1

IGI60F2727A1L combines a half-bridge power stage consisting of two 270 mΩ (typ. RDS(on)) / 600 V enhancement mode CoolGaN™ HEMT with dedicated gate drivers in a small 8 x 8 mm QFN-28 package.It is thus ideally suited to support the design of high density AC-DC charger and adapters utilizing the superior switching behavior of CoolGaN™ power switches. Infineon’s CoolGaN™ and related power switches provide a very robust gate structure. When driven by a continuous gate current of a few mA in the “on” state, a minimum on-resistance RDS(on) is always guaranteed, independent of temperature and parameter variations.The driver utilizes on-chip coreless transformer technology (CT) to achieve signal level-shifting to the high-side. Further, CT guarantees robustness even for extremely fast switching transients above 300 V/ns.

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