1. Infineon
  2. Power
  3. GaN HEMT – Gallium Nitride Transistor

Infineon IGLD60R190D1SAUMA1

The IGLD60R190D1S enables more compact topologies at higher efficiency and higher frequency operation.It is certified through an extensive GaN-specific qualification process, exceeding industry standards.Housed in the bottom-side cooled LSON-8 (DFN 8x8) package, it enables ideal power disspation as required in contemporary USB-C adapters and chargers.
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IGLD60R190D1AUMA1
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