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Infineon


GaN HEMT – Gallium Nitride Transistor

This product is not recommended for new designs. Please explore its successor IGT65R055D2The IGT60R070D1 enables a more compact topology and higher efficiency at higher frequency operation.It is certified through an extensive GaN-specific qualification process, exceeding industry standards.Housed in the bottom-side cooled HSOF-8 (TO-leadless) package, it is designed for optimal power dissipation required in modern data centers, server, telecom, renewables and numerous other applications.
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This product is not recommended for new designs. Please explore its successor IGT65R140D2The IGT60R190D1 enables more compact topologies and increased efficiency at higher frequency operation.It is certified through an extensive GaN-specific qualification process, exceeding industry standards.Housed in the bottom-side cooled HSOF-8 (TO-leadless) package, it is designed for optimal power dissipation required in modern data centers, server, telecom, renewables and numerous other applications.
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The IGOT65R025D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a bottom-side cooled TOLL package, it is designed for optimal power dissipation in various industrial applications.
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The IGT65R035D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a bottom-side cooled TOLL package, it is designed for optimal power dissipation in various industrial applications.
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The IGT65R035D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a bottom-side cooled TOLL package, it is designed for optimal power dissipation in various industrial applications.
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The IGT65R055D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a bottom-side cooled TOLL package, it is designed for optimal power dissipation in various industrial applications.
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The IGT65R140D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a bottom-side cooled TOLL package, it is designed for optimal power dissipation in various consumer and industrial applications.
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