1. Infineon
  2. Power
  3. GaN HEMT – Gallium Nitride Transistor

Infineon IGLD65R140D2AUMA1

The IGLD65R140D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.
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The CAD models below were provided for download to Ultra Librarian by Infineon. All CAD formats may not be available.

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