1. Infineon
  2. Power
  3. GaN HEMT – Gallium Nitride Transistor

Infineon IGC033S101XTMA1

The IGC033S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
Built by Infineon

The CAD models below were provided for download to Ultra Librarian by Infineon. All CAD formats may not be available.

Symbol

Symbol preview for IGC033S101XTMA1

Footprint

Footprint preview for IGC033S101XTMA1

3D Model

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