1. Infineon
  2. Power
  3. GaN HEMT – Gallium Nitride Transistor

Infineon IGC037S12S1XTMA1

The IGC037S12S1 is a 120 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its very low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
Built by Infineon

The CAD models below were provided for download to Ultra Librarian by Infineon. All CAD formats may not be available.

Symbol

Symbol preview for IGC037S12S1XTMA1

Footprint

Footprint preview for IGC037S12S1XTMA1

3D Model

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