1. Infineon
  2. Power
  3. GaN HEMT – Gallium Nitride Transistor

Infineon IGOT65R035D2AUMA1

The IGOT65R035D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.Housed in a top-side cooled DSO package, it is designed for optimal power dissipation in various industrial applications.
Built by Infineon

The CAD models below were provided for download to Ultra Librarian by Infineon. All CAD formats may not be available.

Symbol

Symbol preview for IGOT65R035D2AUMA1

Footprint

Footprint preview for IGOT65R035D2AUMA1

3D Model

No 3D Model Available

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