1. Infineon
  2. Power
  3. GaN HEMT – Gallium Nitride Transistor

Infineon IGO60R070D1AUMA2

The IGO60R070D1 enables more compact topologies and increased efficiency at higher frequency operation.It is certified through an extensive GaN-specific qualification process, exceeding industry standards.Housed in the leaded SMD DSO-20-85 package, it is designed for optimal power dissipation required in modern data centers, server, telecom, renewables, and numerous other applications.
Built by Infineon

The CAD models below were provided for download to Ultra Librarian by Infineon. All CAD formats may not be available.

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