1. Infineon
  2. Power
  3. GaN HEMT – Gallium Nitride Transistor

Infineon IGOT60R070D1AUMA3

This product is not recommended for new designs. Please explore its successor IGLD65R055D2.The IGOT60R070D1 enables more compact topologies and increased efficiency at higher frequency operation.It is certified through an extensive GaN-specific qualification process, exceeding industry standards.Housed in the leaded SMD DSO-20-87 package, it is designed for optimal power dissipation required in modern data centers, server, telecom, renewables, and numerous other applications.
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IGOT60R070D1
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