High speed 600 V, 30 A single TRENCHSTOP™ IGBT3 in a TO220 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.

Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.

Hard- switching 650 V, 40 A TRENCHSTOP™5 IGBT discrete in TO-247 package for high efficiency demands.

Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.

Hard-switching 600 V, 50 A single TRENCHSTOP™ IGBT3 in TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Hard-switching 1200 V, 100 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-247 package which offers low VCEsat to achieve very low conduction losses in target applications.

Hard-switching 1200 V, 120 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-247 package which offers low VCEsat to achieve very low conduction losses in target applications.

Hard-switching 1200 V, 75 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-247 package which offers low VCEsat to achieve very low conduction losses in target applications.

Hard-switching 600 V, 4 A single TRENCHSTOP™ IGBT3 in a TO251 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.