Hard-switching 600 V, 75 A single TRENCHSTOP™ IGBT3 in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.

To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP™ 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration.

To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP™ 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration.

To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP™ 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration.

The Reverse Conducting E1 1200 V, 15 A RC-E IGBTs with monolithically integrated diode in a TO-247 package focusing on system efficiency and reliability for the demanding requirements of induction cooking. Low switching and conducting losses, similar to our RC-H3 family. The RC-E technology uses an IGBT with monolithically integrated reverse conduction diode to set the new benchmark for price/performance and ease-of-use in the industry. This new family offers Infineon’s proven quality in Reverse Conducting IGBTs and meets all the needs of soft switching applications, including attractive pricing compared to other general purpose IGBTs.

The 3rd generation of reverse conducting 1200 V, 15 A TRENCHSTOP™ RC-IGBT3 with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs.

The Reverse Conducting R5 1200 V, 20 A RC-H5 IGBTs with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for the demanding requirements of Induction Cooking applications. With a monolithically integrated diode, the 1200 V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens. The RC-H5 IGBT complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability.

The Reverse Conducting R5 1350 V, 20 A RC-H5 IGBTs with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for the demanding requirements of Induction Cooking applications. With a monolithically integrated diode, the 1350 V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens. The RC-H5 IGBT complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability.

RC Soft Switching 1400 V, 20 A IGBT discrete in a TO-247 3pin package has been designed to fulfill specific requirement of induction cooking applications. With a monolithically integrated diode, the 1400 V Reverse Conducting R5L IGBTs offer a higher breakdown voltage, lower VCEsat and overall lower power losses, bringing the perfect trade-off between power losses and EMI behavior for all soft switching applications.