Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.

Hard-switching 650 V, 39 A TRENCHSTOP™ 5 S5 IGBT in a small footprint TO-220 package addresses applications switching between 10 kHz and 40 kHz to deliver high current density, high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

Hard-switching 1200 V, 40 A HighSpeed 3 H3 in TO-247PLUS package with soft, fast anti-parallel emitter controlled diode.

The Reverse Conducting R5 1600 V, 30 A RC-H5 IGBTs with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for the demanding requirements of Induction Cooking applications. With a monolithically integrated diode, the 1600 V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens. The RC-H5 IGBT complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability.

Hard-switching 1200 V, 40 A high speed TRENCHSTOP™ IGBT6 in a TO-247PLUS 4pin package co-packed with a soft and fast recovery full current anti-parallel diode is the responding to the market requirements for high efficiency and high current density in small discrete packages.

Hard-switching 1200 V, 40 A high speed TRENCHSTOP™ IGBT6 in a TO-247 package co-packed with a soft and fast recovery full current anti-parallel diode is designed to reach the best compromise between switching and conduction losses.

Hard-switching 1200 V, 15 A high speed TRENCHSTOP™ IGBT6 in a TO-247 package co-packed with a very soft and fast recovery anti-parallel diode is optimized for the best compromise between switching and conduction losses.

Hard-switching 1200 V, 75 A high speed TRENCHSTOP™ IGBT6 co-packed with a very soft and fast recovery full current anti-parallel diode in a TO-247PLUS 3pin package is the responding to the market requirements for high efficiency and high current density in small discrete packages.

Hard-switching 1200 V, 40 A TRENCHSTOP™ IGBT4 co-packed with free-wheeling diode in a TO-247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Hard-switching 1200 V, 3 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-263 package which offers low VCEsat to achieve very low conduction losses in target applications.