Hard-switching 1200 V, 8 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-263 package which offers low VCEsat to achieve very low conduction losses in target applications.

Hard-switching 600 V, 10 A single TRENCHSTOP™ IGBT3 Discrete in TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Hard-switching 1200 V, 15 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-263 package which offers low VCEsat to achieve very low conduction losses in target applications.

Hard-switching 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The highest efficiency is reached due to the best compromise between switching and conduction losses.

The 650 V, 15 A high speed switching TRENCHSTOP™ 5 in D2Pak (TO263) package single IGBT, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

High speed 600 V, 20 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

The 650 V, 20 A high speed switching TRENCHSTOP™ 5 in D2Pak (TO263) package single IGBT addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

High speed 600 V, 30 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

Hard-switching 600 V, 30 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Hard-switching 600 V, 50 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The highest efficiency is reached due to the best compromise between switching and conduction losses.