The BGS12WN6 is a broadband SPDT RF switch suitable for various wireless systems, including WiFi \BT, UWB, and cellular. Its high linearity performance and low insertion loss make it an ideal choice for switching transmit signals, e.g., as Tx \Rx switch or as antenna diversity switch. The integrated on-chip CMOS logic allows direct connection to a digital control pin, eliminating the need for extra interface circuitry, thereby simplifying system design, and reducing component count. The isolated port is a reflective short. The device’s flexible voltage supply and control enable easy adaptation to diverse applications and use cases.The BGS12WN6 is fabricated using Infineon’s proprietary RF CMOS technology. Housed in a miniature package, this device is particularly well-suited for applications where PCB space is critical, allowing for optimal utilization of available board real estate.

The BGS13SN8 is a single-pole, triple-throw (SP3T) antenna switch for 2.4 GHz WiFi, Bluetooth and cellular applications. It offers low insertion loss and high isolation with low harmonic distortion. BGS13SN8 is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness.

The BGS14M8U9 is a Single Pole Four Throw (SP4T) high power switch in a compact 9-pin package (1.1 x 1.1 mm2).The device is optimized for 5G and other cellular applications up to 7.125 GHz. With a low insertion loss, high isolation, high linearity and high power handling, BGS14M8U9 is perfect for 5G and LTE 4G applications, such as 5G SRS, Uplink-Carrier Aggregation, and High Power User Equipment (HPUE Class 2).

This SP4T RF switch is a perfect solution for multimode handsets based on LTE and WCDMA. It is based on Infineon’s proprietary technology and has excellent RF performance. The ultra-low insertion loss helps customers to achieve high system sensitivity, the coverage of LTE Tx power and 6 GHz enables very broad application. It features DC-free RF ports, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. Its on chip MIPI RFFE 2.0 controller isfully compatible with industry standard, with external USID_SEL pin it can support two devices per MIPI RFFE bus.

The BGS16GA14 is a Single Pole Six Throw (SP6T) Diversity Switch Module optimized for wireless applications up to 3.8 GHz. As part of a pin- and functional-compatible SP3T-SP8T product family it has been designed to meet the requirements of chipset reference designs. The module comes in a miniature ATSLP package and comprises of a high power CMOS SP8T switch with integrated GPIO interface. This RF switch is a perfect solution for multimode handsets based on LTE and WCDMA.The switch is controlled via a GPIO interface. It features DC-free RF ports and unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally.

The BGSX44MA12 RF CMOS switch is specifically designed for LTE and WCDMA Receive path applications. This 4P4T offers low insertion loss and low harmonic generation.The switch is controlled via a MIPI RFFE controller. The on-chip controller allows power-supply voltages from 1.65 to 1.95 V.The BGSX44MA12 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 1.6 x 1.6 mm2 and a maximum thickness of 0.6 mm.