BGS15MU14 is a perfect fit for concurrent transmit chains in UL-CA and MIMO RF design scenarios on input port feedback receive (FBRx).It has a very small form factor with a maximum thickness of just 0.6 mm. BGS15MU14 has been designed to guarantee best-in-class isolation performance up to 6.0 GHz (>50 dB) in high demanding FBRx applications. It has the capability to increase flexibility of RF designs, reduce space and offer BOM cost savings.The device is MIPI controlled. The on-chip controller allows power-supply voltages from 1.65 to 1.95 V. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is externally applied.

The BGS12P2L6 is a general purpose high power SPDT switch, designed to cover a broad range applications from 0.05 to 6 GHz and therefore excellent for 5G sub-6 GHz. Its outstanding RF performance optimizes the transmitting path (TRx) of LTE/5G mobile phones. The chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally.The BGS12P2L6 RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 0.7 x 1.1 mm2 and a maximum height of 0.31 mm.

MIPI 2.0 SP8T switch for LTE diversity, Tx and LAA applicationsThis SP8T RF switch is a perfect solution for multimode handsets based on LTE, WCDMA and TDCDMA. It is based on Infineon’s proprietary technology and has excellent RF performance. The ultra-low insertion loss helps customers to achieve high system sensitivity, the coverage of LTE Tx power and 6 GHz enables very broad application. It features DC-free RF ports, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. Its on-chip MIPI RFFE 2.0 controller is fully compatible with industry standard.

The BGS18GA14 is a Single Pole Eight Throw (SP8T) Diversity Switch Module optimized for wireless applications up to 3.8 GHz. As part of a pin- and functional-compatible SP3T-SP8T product family it has been designed to meet the requirements of chipset reference designs. The module comes in a miniature ATSLP package and comprises of a high power CMOS SP8T switch with integrated GPIO interface. This RF switch is a perfect solution for multimode handsets based on LTE and WCDMA.The switch is controlled via a GPIO interface. It features DC-free RF ports and unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally.

MIPI 2.0 SP6T switch for LTE diversity, Tx and LAA applicationsThis SP6T RF switch is a perfect solution for multimode handsets based on LTE and WCDMA. It is based on Infineon’s proprietary technology and has excellent RF performance. The ultra-low insertion loss helps customers to achieve high system sensitivity, the coverage of LTE Tx power and 6 GHz enables very broad application. It features DC-free RF ports, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. Its on-chip MIPI RFFE 2.0 controller is fully compatible with industry standard.

The BGS14PN10 is a Single Pole Quad Throw (SP4T) high linearity, high power RF switch optimized for mobile phone applications up to 6.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a two simple, CMOS or TTL compatible control input signals. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch maximum input power level, resulting in linear performance at all signal levels and external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally.The BGS14PN10 enables critical band combinations for UL (B1 + B3), (B2+B4), DL-CA (B4 + B12) and SV-LTE (B5 + B13). This device handles very high transmitting signal levels of up to 38 dBm, while at the same time exhibiting low losses to conserve battery power. Ultra high linearity devices have a significant impact on system sensitivity. For instance, 3 dBm more linearity in whole RF-front-end leads to 6 dB better signal-to-noise ratio. Hence, data rate speed is improved by up to 40% allowing a step e.g. from 20 Mbps (QAM16 4/5) to 33 Mbps (QAM64 4/5). The BGS14PN10 stands for Best-in-Class ISO and IL performance across all frequencies.

The BGS13S4N9 RF MOS switch is specifically designed for cell phone and mobile applications. Any of the 3 ports can be used as termination of the diversity antenna handling up to 30 dBm. It offers outstanding ESD robustness of 1kV.This SP3T offers low insertion loss and high robustness against interferer signals at the antenna port and low harmonic generation in termination mode. The on-chip controller integrates CMOS logic and level shifters, driven by control inputs from 1.35 V to VDD.The BGS13S4N9 RF Switch is manufactured in Infineon’s patented CMOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS.

The BGS12SN6 RF MOS switch is specifically designed for WLAN and Bluetooth applications. Any of the 2 ports can be used as termination of the diversity antenna handling up to 30 dBm. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of 0.25 dB in the 1 GHz and 0.29 dB in the 2.5 GHz range.Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally.The BGS12SN6 RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 0.7x1.1mm2 and a maximum height of 0.375 mm.Evaluation Board: BGS12SN6 BOARD

The BGS12PN10 is a Single Pole Dual Throw (SPDT) high linearity, high power RF switch optimized for mobile phone applications up to 6.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a simple, CMOS or TTL compatible control input signal. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch maximum input power level, resulting in linear performance at all signal levels and external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally.The BGS12PN10 enables critical band combinations for UL (B1 + B3), (B2+B4), DL-CA (B4 + B12) and SV-LTE (B5 + B13). This device handles very high transmitting signal levels of up to 38 dBm, while at the same time exhibiting low losses to conserve battery power. Ultra high linearity devices have a significant impact on system sensitivity. For instance, 3 dBm more linearity in whole RF-front-end leads to 6 dB better signal-to-noise ratio. Hence, data rate speed is improved by up to 40% allowing a step e.g. from 20 Mbps (QAM16 4/5) to 33 Mbps (QAM64 4/5). The BGS12PN10 stands for Best-in-Class ISO and IL performance across all frequencies.

BGS14WMA9 is a Single Pole Four Throw (SP4T) diversity switch which is specifically designed for WLAN and Bluetooth applications in a very compact 9 pin package with very small size of only 1.1 x 1.1 mm2 and thickness of 0.55 mm.Any of the 4 ports can be used as termination of the diversity antenna handling up to 26 dBm.Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally.BGS14WMA9 RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherently higher ESD robustness.