BGA729N6 is a broadband low power low noise amplifier (LNA) MMIC for portable and mobile TV applications which covers a wide frequency range from 70 MHz to 1000 MHz. The LNA provides 16.3 dB gain and 1.1 dB noise figure at a current consumption of 6.0 mA in the application configuration. In bypass mode the LNA provides an insertion loss of -4.0dB. The BGA729N6 is based upon Infineon Technologies B7HF Silicon Germanium technology. It operates from 1.5 V to 3.3 V supply voltage.

BGA7H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2690 Mhz and operates from1.5 V to 3.3 V supply voltage. The device features a single-line two-state control (Bypass- and High gain-Mode) and OFF-state can be enabled by powering down Vcc

Silicon Germanium Low Noise Amplifier for LTE

BGA7L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 716 MHzto 960 MHz and operates from1.5 V to 3.3 V supply voltage.The device features a single-line two-state control (Bypass- and High gain-Mode) and OFF-state can be enabled by powering down Vcc.

Silicon Germanium Low Noise Amplifier for LTE

The BGA8U1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 4.0 GHz to 6.0 GHz. The LNA provides 13.7 dB gain and 1.6 dB noise figure at a current consumption of 4.5mA. In bypass mode the LNA provides an insertion loss of 7.5 dB.The BGA8U1BN6 is based upon Infineon Technologies B7HF Silicon Germanium technology. It operates from 1.6 V to 3.1 V supply voltage. The device features a multi-state control (OFF-, bypass- and high gain-Mode).

The BGA8V1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 3.3 GHz to 3.8 GHz. The LNA provides 15.0 dB gain and 1.2 dB noise figure at a current consumption of 4.2mA. In bypass mode the LNA provides an insertion loss of 5.3 dB.The BGA8V1BN6 is based upon Infineon Technologies B9HF Silicon Germanium technology. It operates from 1.6 V to 3.1 V supply voltage. The device features a multi-state control (OFF-, bypass- and high gain-Mode).

The BGA9H1BN6 is designed for 4G and 5G applications covering 3GPP bands between 2.5 and 2.7 GHz (for band n41). Thanks to a high gain and an ultra-low noise figure performance of the LNA the system sensitivity is significantly improved compared to conventional LNAs. The GPIO interface provides a straightforward control over multiple operation modes. Next to the high gain mode and bypass mode, a power-save and a high performance mode can be selected to increase system dynamic. Thanks to the low-power mode with 2.2 mA current consumption and 1.2V operation voltage the overall power consumption is extremely low. The BGA9H1BN6 is suitable to be implemented in small battery powered devices like wearables or smartphones.