The BGB741L7ESD is a high performance broadband low noise amplifier (LNA) MMIC based on Infineon’s silicon germanium carbon (SiGe:C) bipolar technology.

Silicon Germanium Low Noise Amplifier for LTE

The BGA616 is a broadband matched general purpose MMIC amplifier in a Darlington configuration. It is optimizedfor a typical supply current of 60 mA. The BGA616 is based on Infineon Technologies’ B7HF Silicon Germanium technology.

The BGA5H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 2300 MHz to 2690 MHz. The LNA provides 18.1 dB gain and 0.7 dB noise figure at a current consumption of 8.5 mA. In bypass mode the LNA provides an insertion loss of 5.2 dB.The BGA5H1BN6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. The device features a single-line two-state control (bypass- and high gain-mode). OFF-state can be enabled by powering down VCC.

Si-MMIC-Amplifier in SIEGET® 25-Technologie

The BGB707L7ESD is a high performance low noise amplifier (LNA) MMIC based on Infineon’s silicon germanium carbon (SiGe:C) bipolar technology.

Si-MMIC-Amplifier in SIEGET® 25-Technologie

The BGA5L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 600 MHz to 1000 MHz. The LNA provides 18.5 dB gain and 0.7 dB noise figure at a current consumption of 8.2mA. In bypass mode the LNA provides an insertion loss of 2.7 dB.The BGA5L1BN6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. The device features a single-line two-state control (bypass- and high gain-mode). OFF-state can be enabled by powering down VCC.

The BGA5M1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2200 MHz. The LNA provides 19.3 dB gain and 0.65 dB noise figure at a current consumption of 9.5mA. In bypass mode the LNA provides an insertion loss of 4.7 dB.The BGA5M1BN6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. The device features a single-line two-state control (Bypass- and High gain-Mode). OFF-state can be enabled by powering down VCC.

BGA614 is a broadband matched, general purpose MMIC amplifier in a Darlington configuration. It is optimized for a typical supply current of 40 mA. The BGA614 is based on Infineon Technologies’ B7HF Silicon Germanium technology.