The BGA7P220 is a 2.3 to 2.7 GHz low-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 27.5 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The driver amplifier boasts high linearity and an excellent wide-band gain flatness of <0.5 dB for optimum linearization results of the driven PA.

The BGA7P320 is a 3.3 to 4.2 GHz mid-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 27.8 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The driver amplifier boasts high linearity and an excellent wide-band gain flatness <0.5 dB for optimum linearization results of the driven PA.

The BGA P2D20A is a 2.3 to 2.7 GHz low-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 28.9 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The input is 100Ω differential, the output is 50Ω single-ended. The driver amplifier boasts high linearity and an excellent wide-band gain flatness of <0.2 dB for optimum linearization results of the driven PA.

The BGA P2D30A is a 3.3 to 4.2 GHz mid-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 28.5 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The input is 100Ω differential, the output is 50Ω single-ended. The driver amplifier boasts high linearity and an excellent wide-band gain flatness of <0.3 dB for optimum linearization results of the driven PA.

The BGA P2S20A is a 2.3 to 2.7 GHz low-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 28.9 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The input and outputs are single-ended and internally matched to 50 Ω. The driver amplifier boasts high linearity and an excellent wide-band gain flatness of <0.3 dB for optimum linearization results of the driven PA.

The BGA P2S30A is a 3.3 to 4.2 GHz mid-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 28.5 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The input and outputs are single-ended and internally matched to 50 Ω. The driver amplifier boasts high linearity and an excellent wide-band gain flatness of <0.4 dB for optimum linearization results of the driven PA.

The BGA P3D30H is a 3.1 to 4.2 GHz mid-band SiGe RF driver amplifier optimized for 5G massive MIMO base stations and small cells. It provides a high OP1dB of 31 dBm and features single-ended, internally matched 50 Ω in-/output. With high linearity, gain flatness of <0.35 dB, and excellent RF performance can serve as a pre-driver or power amplifier. This device is suited for improving linearization in driven power amplifiers for low-power applications.