Infineon
HITFET™ +12V
Infineon
BTS3060TFATMA1
The power transistor is built by a N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3060TF is automotive qualified and is optimized for 12V automotive and industrial applications.
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Infineon
BTS3080EJXUMA1
The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3080EJ is automotive qualified and is optimized for 12V automotive applications.
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Infineon
BTS3080TFATMA1
The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3080TF is automotive qualified and is optimized for 12 V automotive applications.
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Infineon
BTS3125EJXUMA1
The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3125EJ is automotive qualified and is optimizedfor 12 V automotive applications.
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Infineon
BTS3125TFATMA1
The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3125TF is automotive qualified and is optimized for 12 Vautomotive applications.
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