Infineon
HITFET™ +12V
Infineon
BTS3050TFATMA1
The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3050TF is automotive qualified and is optimized for 12 V automotive applications.
Models Available
Infineon
BTS3011TEATMA1
The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3011TE is automotive qualified and is optimized for 12 V automotive and industrial applications.
Models Available
Infineon
BTS3035EJXUMA1
The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3035EJ is automotive qualified and is optimizedfor 12 V automotive applications.
Models Available
Infineon
BTF3035EJXUMA1
The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTF3035EJ is automotive qualified and is optimized for 12V automotive and industrial applications.
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Infineon
BTF3050EJXUMA1
The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTF3050EJ is automotive qualified and is optimized for 12V automotive and industrial applications.
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Infineon
BTF3050TEATMA1
The power transistor is built by a N-channel vertical power MOSFET. The device is monolithically integrated. The BTF3050TE is automotive qualified and is optimized for 12V automotive and industrial applications.
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Infineon
BTF3080EJXUMA1
The power transistor is built by an N channel vertical power MOSFET. The device is monolithically integrated. The BTF3080EJ is automotive qualified and is optimized for 12V automotive and industrial applications.
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Infineon
BTF3125EJXUMA1
The power transistor is built by an N channel vertical power MOSFET. The device is monolithically integrated. The BTF3125EJ is automotive qualified and is optimized for 12V automotive and industrial applications.
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Infineon
BTS3035TFATMA1
The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3035TF is automotive qualified and is optimized for 12 V automotive applications.
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Infineon
BTS3050EJXUMA1
The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS305EJ is automotive qualified and is optimizedfor 12 V automotive applications.
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