The AIMW120R060M1H is specifically designed to meet the high requirements demanded by the automotive industry with regards to reliability, quality and performance.The increase of switching frequency for a converter using CoolSiC™ MOSFETs can result in dramatically reduced volume and weight of the magnetic components by up to 25%, which yields to significant cost decrease of the application itself. The gain in performance fulfills new regulation standards in terms of higher efficiency requirements for electric vehicles. The superior gate oxide reliability as well as the best-in-class Infineon SiC Quality Extension guarantees very long and safe lifetime and can even fulfill very tough mission profile requirements. Further features such as lowest gate charge and device capacitances levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses and threshold-free on-state characteristics guarantee an hustle-free design-in and easy-to-control application design.

The AIMW120R035M1H is specifically designed to meet the high requirements demanded by the automotive industry with regards to reliability, quality and performance.The increase of switching frequency for a converter using CoolSiC™ MOSFETs can result in dramatically reduced volume and weight of the magnetic components by up to 25%, which yields to significant cost decrease of the application itself. The gain in performance fulfills new regulation standards in terms of higher efficiency requirements for electric vehicles. The superior gate oxide reliability as well as the best-in-class Infineon SiC Quality Extension guarantees very long and safe lifetime and can even fulfill very tough mission profile requirements. Further features such as lowest gate charge and device capacitances levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses and threshold-free on-state characteristics guarantee an hustle-free design-in and easy-to-control application design.

The CoolSiC™ 1200 V, 45 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.

The CoolSiC™1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.

The CoolSiC™ 1200 V, 220 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.

The CoolSiC™ 1200 V, 140 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.

The CoolSiC™ 1200 V, 90 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.

The CoolSiC™ 1200 V, 60 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.

The CoolSiC™ 1200 V, 45 mΩ SiC MOSFET in a D2PAK-7L package (TO-263-7) build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.

The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.