1. Infineon
  2. Power
  3. MOSFET
  4. Silicon Carbide
  5. Discretes

Infineon IMBG120R045M1HXTMA1

The CoolSiC™ 1200 V, 45 mΩ SiC MOSFET in a D2PAK-7L package (TO-263-7) build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.
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