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Infineon


SEMPER™ NOR Flash

The S25HL512TFAMHM013 is part of the SEMPER™ NOR Flash Memory family from Infineon, specifically designed for automotive applications. With a density of 512 Mbit and a Quad SPI interface, it offers an impressive interface bandwidth of 102 MBytes/s. Operating at a voltage of 3 V and an interface frequency of 166MHz (SDR) / 102MHz (DDR), the product ensures superior performance packaged in the highly reliable PG-DSO-16 Infineon package.
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The S25HL512TFAMHV010 is a 512 Mbit SEMPER™ NOR Flash Memory from the HL-T family. It harnesses the Quad SPI interface offering an impressive bandwidth of 102 MByte/s and an operating voltage of 3 V. The advanced Infineon 45-nm MIRRORBIT™ technology allows two data bits to be stored in each memory array cell, while the Infineon Endurance Flex architecture enhances longevity. The device is encased in the robust PG-DSO-16 Infineon package.
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The S25HL512TFAMHV013, part of the SEMPER™ NOR Flash Memory family by Infineon, boasts a density of 512 Mbit and an interface bandwidth of 102 MByte/s. Using Quad SPI interface, this device can efficiently operate at a voltage of 3V. With interface frequency of 166 MHz for SDR and 102 MHz for DDR, it promises speed and efficiency. Housed in a PG-DSO-16 package, this device offers significant technological advantage powered by Infineon's 45-nm MIRRORBIT™ technology.
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The S25HL512TFANHB010 is a SEMPER™ NOR flash memory device designed by Infineon to offer unparalleled function and reliability. Part of the HL-T family, this automotive grade flash memory features a 512 Mbit density and a Quad SPI Interface with a bandwidth of 102 MByte/s. Operating on a 3V voltage, it provides a unique blend of high-speed functionality, substantial data retention, and advanced safety and security features.
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The S25HL512TFANHB013 is a high-end automotive qualified SEMPER™ NOR Flash Memory device from Infineon with a density of 512 Mbit. It offers robust performance with a Quad SPI interface and a bandwidth of 102 MByte/s. Operating at a voltage of 3 V, it utilizes the HL-T family technology. It boasts ISO 26262 compliance and is packaged in PG-WSON-8. Its interface frequency functions at 166 MHz for SDR and 102 MHz for DDR, showcasing its advanced capabilities.
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The Infineon S25HL512TFANHI013 is part of the innovative SEMPER™ NOR Flash Memory family. With a density of 512 Mbit and a Quad SPI interface, this memory unit has an impressive bandwidth of 102 MByte/s. It operates at an optimal voltage of 3V and features a variable interface frequency (SDR/DDR) of 166/102 MHz. The S25HL512TFANHI013 is well encased in the reliable and robust PG-WSON-8 Infineon package.
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The S25HL512TFANHM010 is a leading-edge automotive-grade SEMPER™ NOR Flash Memory from Infineon. It operates at a voltage of 3V with an interface bandwidth of 102 MByte/s and a density of 512 Mbit. Featuring Quad SPI interface, HL-T family, and ISO 26262 compliance, the product is packed in an Infineon PG-WSON-8 package. It employs 45-nm MIRRORBIT™ technology and offers sector architecture options for versatile data storage.
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The S25HL512TFANHM013 is part of Infineon's SEMPER™ NOR Flash Memory family, featuring 512 Mbit density with a high Interface Bandwidth of 102 MByte/s. This automotive-qualified memory offers a quad SPI interface with operating voltage of 3V. It also features an interface frequency of 166/102 MHz and is elegantly encased in the Infineon Package name: PG-WSON-8. Notably, it's ISO 26262-compliant, ensuring safety and reliability.
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The S25HL512TFANHV010 is a high-performance, 512 Mbit SEMPER™ NOR Flash Memory, part of the HL-T family. It features a Quad SPI Interface with a bandwidth of 102 MByte/s, an operating voltage of 3 V, and interface frequency of 166 / 102 MHz (SDR/DDR). It is housed in the PG-WSON-8 Infineon Package and built on the technologically advanced 45-nm MIRRORBIT™ technology.
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The S25HL512TFANHV013 is a SEMPER™ NOR Flash Memory from the Infineon's HL-T family. With a density of 512 Mbits and a Quad SPI interface, it delivers a bandwidth of 102 MB/s. This high-performance flash memory operates on a 3V voltage with a frequency of 166 MHz/102 MHz in SDR/DDR. It is incorporated in the PG-WSON-8 package and exhibits the cutting-edge 45-nm MIRRORBIT™ technology.
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