The S25HL512TDPBHV010 is part of Infineon's SEMPER™ NOR Flash Memory family, featuring a 512 Mbit density, Quad SPI interface with a bandwidth of 66 MByte/s, and an operating voltage of 3 V. Incorporating Infineon's 45-nm MIRRORBIT™ technology, the memory product operates at interface frequencies of 133 / 66 MHz (SDR/DDR) and is housed in a PG-BGA-24 package.

The S25HL512TDPBHV013 is part of Infineon's SEMPER™ NOR Flash Memory family. It has a density of 512 Mbit and interfaces via Quad SPI with an interface bandwidth of 66 MByte/s. The device operates at a voltage of 3 V and boasts interface frequency of 133/66 MHz (SDR/DDR). The specific package for this model is PG-BGA-24 and it utilizes Infineon's advanced 45-nm MIRRORBIT™ technology to store two data bits in each memory cell.

The S25HL512TDPMHB010 is a 512 Mbit memory device part of Infineon's SEMPER™ NOR Flash Memory family, designed for automotive qualifications. It adopts advanced Infineon 45-nm MIRRORBIT™ technology, featuring Quad SPI interface with a bandwidth of 66 Mbyte/s and operating voltage of 3V. With sector architecture options and a page programming buffer of 256 to 512 bytes, it comes in a PG-DSO-16 package and is ISO 26262-compliant.

The S25HL512TDPMHB013 is an automotive-grade SEMPER™ NOR Flash Memory from the HL-T family with 512 Mbit density. This robust and flexible memory solution features Quad SPI interface with 66 MByte/s bandwidth and a 3-volt operating voltage. It utilizes 45-nm MIRRORBIT™ technology, supports multiple sector architectures, and offers a page programming buffer. Additionally, it incorporates advanced safety and protection measures, being ISO 26262-compliant. It's packaged in Infineon's PG-DSO-16.

The S25HL512TDPMHI010, a part of Infineon's SEMPER™ NOR Flash Memory family, boasts a storage density of 512 Mbit and uses the state-of-the-art Infineon 45-nm MIRRORBIT™ technology. It supports a Quad SPI interface with a bandwidth of 66 MByte/s and operates at 3V with an interface frequency of 133 / 66 MHz under SDR/DDR respectively. Designed to deliver high-performance and safe storage solutions, this component is housed in a durable PG-DSO-16 package by Infineon.

The S25HL512TDPMHI013 is a member of Infineon's SEMPER™ NOR Flash Memory family. With a density of 512 Mbit and a 66 MByte/s interface bandwidth, it offers high-speed performance via its Quad SPI interface. It operates on a voltage of 3V and an interface frequency of 133/66 MHz (SDR/DDR). Packaged in PG-DSO-16, the S25HL512TDPMHI013 leverages Infineon's 45-nm MIRRORBIT™ technology for enhanced data storage.

The Infineon S25HL512TDPMHM010, part of the SEMPER™ NOR Flash Memory family, is an automotive-grade memory unit with a density of 512 Mbit. This ISO 26262-compliant memory operates using a Quad SPI interface with a bandwidth of 66 MByte/s and an operating voltage of 3 V. It features an interface frequency of 133 / 66 MHz, and is packaged in Infineon's PG-DSO-16. This Flash Memory utilizes advanced 45-nm MIRRORBIT™ technology.

The S25HL512TDPMHM013 is a high-performance device from the SEMPER™ NOR Flash Memory family by Infineon. Boasting an automotive qualification and a high density of 512 Mbits, it operates at 3V and has a Quad SPI interface. The device is ISO 26262-compliant, establishing its safety credentials. Its interface bandwidth is 66 MByte/s, with interface frequencies of 133 MHz (SDR) and 66 MHz (DDR), providing a balance of speed and reliability. Its packaging is PG-DSO-16.

The S25HL512TDPMHV010 from SEMPER™ NOR Flash Memory family features superior Infineon 45-nm MIRRORBIT™ technology which stores two data bits in each memory cell. It provides 512 Mbit density with a Quad SPI interface at an operating voltage of 3V. This flash memory is engineered with a Page programming buffer of 256 or 512 bytes and an OTP secure silicon array of 1024 bytes. It is designed to ensure high-endurance and long retention partitions with functional safety.

The S25HL512TDPMHV013, from Infineon's SEMPER™ NOR Flash Memory family, offers a density of 512 Mbit. With an interface bandwidth of 66 MByte/s and Quad SPI interface operating at a frequency of 133 MHz (SDR) and 66 MHz (DDR), this device efficiently supports demanding applications. It functions at an operating voltage of 3 V, and utilizes Infineon's advanced 45-nm MIRRORBIT™ technology to store two data bits per memory array cell.