The BFP640FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic thin small flat 4-pin dual emitter package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640FESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V.

NPN Silicon Germanium RF Transistor

The BFP720ESD is Silicon Germanium Carbon (SiGe:C) NPN heterojunction wideband bipolar RF Transistor (HBT) with an integrated ESD protection.

The BFP720FESD is Silicon Germanium Carbon (SiGe:C) NPN heterojunction wideband bipolar RF Transistor (HBT) with an integrated ESD protection

The BFP720F is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).

The BFP840ESD is a discrete hetero-junction bipolar transistor (HBT) specifically designed for high performance 5 GHz band.

The BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications.

The BFP843F is a robust low noise broadband pre-matched hetero-junction bipolar transistor (HBT).

The BFP843 is a robust low noise broadband pre-matched RF heterojunction bipolar transistor (HBT).