N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.

N channel vertical power FET in Smart SIPMOS® technology. Fully protected by embedded protection functions.

The power transistor is build by a N-channel vertical power MOSFET. The device is controlled by a control chip in Smart Power Technology.The device is able to switch all kind of resistive, inductive and capacitive loads. For lamp loads the lamp-inrush-current, eight- to ten-times the nominal current, has to be considered. The maximal inrush current has to be below the minimum short circuit shutdown current.

The device is monolithic integrated and consist of an N-channel power MOSFET transistor and additional protection circuitry.

This HITFET™ is designed for automotive and industrial applications with outstanding protection and control features. The power transistor is a N-channel vertical power MOSFET. The device is controlled by a chip in Smart Power Technology.

The device is monolithically integrated with a N channel power MOSFET and additional protection functions. The BTS3800SL is especially designed as a protected relay driver in automotive and industrial applications.