Rapid 1 switching 650 V, 80 A emitter controlled silicon power diode in a TO-247 advanced isolation package for a best cost efficient solution.

Rapid 1 switching 650 V, 80 A emitter controlled power silicon diodes in common cathode configuration and in a TO-247 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs.

The 600 V, 100 A emitter controlled silicon power diode in a TO-247 package has been primarily designed for motor drive applications up to 30kHz.

The 1200 V, 18 A emitter controlled silicon power diode in a D2PAK TO-263 package displays excellent softness and VF behaviour and is qualified with a T j(max) of 150°C. The diodes are also available halogen-free according to IEC61249-2-21.

Ultra-soft 1200 V, 30 A emitter controlled silicon power diode in a D2PAK TO-263 package is qualified with a T j(max) of 150°C. The diodes are also available halogen-free according to IEC61249-2-21.

Rapid 1 switching 650 V, 40 A emitter controlled silicon power diode in a TO-247 advanced isolation package for a best cost efficient solution.

Rapid 1 switching 650 V, 60 A emitter controlled silicon power diode in a TO-247 advanced isolation package for a best cost efficient solution.

Rapid 1 switching 650 V, 8 A emitter controlled power silicon diodes in a TO-220 real2pin package is perfectly suited for Power Factor Correction (PFC) topologies, typically found in major home appliances such as air conditioners and washing machines.

Rapid 2 switching 650 V, 8 A emitter controlled power silicon diode in a TO-220 real2pin package is designed for applications switching between 40 kHz and 100 kHz.

The 1200 V, 12 A emitter controlled silicon power diode in a TO-220 real 2-leg package displays excellent softness and VF behaviour and is qualified with a Tj(max) of 150°C. The diodes are also available halogen-free according to IEC61249-2-21.