CoolSiC™ Schottky diode 2000 V, 10 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enhanced system performance.The diode is the perfect fit for the matching CoolSiC™ MOSFET 2000 V portfolio.

The CoolSiC™ Schottky diodes generation 5 1200 V, 15 A is also available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative. The output power of PFC and DC-DC stages can thus be substantially increased, by 40% or more. Other than negligible switching losses – the signature feature of SiC Schottkys – CoolSiC™ Generation 5 products come with best-in-class forward voltage (VF), the slightest increase of VF with temperature and highest surge current capability. The result is a series of products delivering market-leading efficiency and more system reliability at an attractive cost point.

CoolSiC™ Schottky diode 2000 V, 25 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enhanced system performance.The diode is the perfect fit for the matching CoolSiC™ MOSFET 2000 V portfolio.

CoolSiC™ Schottky diode 2000 V, 40 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enhanced system performance.The diode is the perfect fit for the matching CoolSiC™ MOSFET 2000 V portfolio.

CoolSiC™ Schottky diode 2000 V, 50 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enhanced system performance.The diode is the perfect fit for the matching CoolSiC™ MOSFET 2000 V portfolio.

CoolSiC™ Schottky diode 2000 V, 80 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enhanced system performance.The diode is the perfect fit for the matching CoolSiC™ MOSFET 2000 V portfolio.

CoolSiC™ Schottky diode 2000 V, 10 A generation 5 in a TO-247PLUS-4 HCC package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The extended 14 mm creepage and 5.4 mm clearance distances of the new TO-247PLUS-4 HCC package offer extra safety in harsh environments.The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly resistant to humidity. The diode is the perfect fit for the matching CoolSiC™ MOSFET 2000 V portfolio.

CoolSiC™ Schottky diode 2000 V, 25 A generation 5 in a TO-247PLUS-4 HCC package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The extended 14 mm creepage and 5.4 mm clearance distances of the new TO-247PLUS-4 HCC package offer extra safety in harsh environments.The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly resistant to humidity. The diode is the perfect fit for the matching CoolSiC™ MOSFET 2000 V portfolio.

CoolSiC™ Schottky diode 2000 V, 40 A generation 5 in a TO-247PLUS-4 HCC package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The extended 14 mm creepage and 5.4 mm clearance distances of the new TO-247PLUS-4 HCC package offer extra safety in harsh environments.The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly resistant to humidity. The diode is the perfect fit for the matching CoolSiC™ MOSFET 2000 V portfolio.

CoolSiC™ Schottky diode 2000 V, 50 A generation 5 in a TO-247PLUS-4 HCC package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The extended 14 mm creepage and 5.4 mm clearance distances of the new TO-247PLUS-4 HCC package offer extra safety in harsh environments.The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly resistant to humidity. The diode is the perfect fit for the matching CoolSiC™ MOSFET 2000 V portfolio.