The BTS3160D is a latching one channel low-side power switch in PG-TO-252-5-13 package providing embedded protective functions. The power transistor is build by a N-channel vertical power MOSFET. The device is controlled by a control chip in Smart Power Technology.The device is able to switch all kind of resistive, inductive and capacitive loads. For lamp loads the lamp-inrush-current, eight- to ten-times the nominal current, has to be considered. The maximal inrush current has to be below the minimum short circuit shutdown current.

The BTS 3256D is a single channel low-side power switch in PG-TO-252-5-11 package providing embedded protective functions. This HITFET™ is designed for automotive and industrial applications with outstanding protection and control features. The power transistor is a N-channel vertical power MOSFET. The device is controlled by a chip in Smart Power Technology.

The BTS3408G is a dual channel Low-Side Switch with D-MOS output stages for driving resistive, capacitive and inductive loads. The design is based on Infineons Smart Power Technology (SPT) which allows bipolar, CMOS and power D-MOS devices on the same monolithic circuit. The BTS3408G is protected by embedded protection functions and designed for automotive and industrial applications. It is especially suited for driving stepper motors and lines.