The BTS3205N is a one channel low-side power switch in PG-SOT-223-4 package providing embedded protective functions. The device is monolithic integrated and consist of an N-channel power MOSFET transistor and additional protection circuitry.

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.

The BTS3104SDR is a single channel low-side MOSFET power switch in PG-T0252-3-11 package providing embedded protective functions. The device is monolithically integrated with a N channel vertical power FET and embedded protection functions. The BTS3104SDR is automotive qualified and can be used in 12V and 24V automotive and industrial applications.The BTS3104SDR is a single channel low-side MOSFET power switch in PG-T0252-3-11 package providing embedded protective functions. The device is monolithically integrated with a N channel vertical power FET and embedded protection functions. The BTS3104SDR is automotive qualified and can be used in 12V and 24V automotive and industrial applications.

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.

N channel vertical power FET in Smart SIPMOS® technology. Providing embedded protection functions.

N channel vertical power FET in Smart SIPMOS® technology. Providing embedded protection functions.

N channel vertical power FET in Smart SIPMOS® technology. Providing embedded protection functions.

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.

N channel vertical power FET in Smart SIPMOS® technology. Providing embedded protection functions.