The BFR840L3RHESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFR840L3RHESD provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the WiFi application. Integrated protection elements at in- and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in a very small thin leadless package, ideal for modules.

The BFP740FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a thin, small, flat, 4-pin dual emitter plastic package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP740FESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.2 V.

The BFP740ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP740ESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.2 V.

The BFP720 is a wideband Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT) in a plastic 4-pin dual emitter SOT343 package. The device combines very high gain with lowest noise figure at low operating current for use in a wide range of wireless applications. The BFP720 is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Collector design supports operation voltages from 1.0 V to 4.0 V.

The BFP640ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640ESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V.

The BFP640FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic thin small flat 4-pin dual emitter package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640FESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V.