The BGA725L6 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, GLONASS, Beidou, Galileo and others. The LNA provides 20.0 dB gain and 0.65 dB noise figure at a current consumption of 3.6 mA in the application configuration described. The BGA725L6 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage.

The BGA715N7 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, GLONASS, Beidou, Galileo and others. The LNA provides 20 dB gain, 0.7 dB noise figure and high linearity performance in the application configuration. Current consumption is as low as 3.3 mA. The BGA715N7 is based upon Infineon Technologies‘ B7HFM Silicon Germanium technology. It operates over a 1.5 V to 3.3 V supply range.

Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS)

The BGA231N7 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, Galileo, GLONASS and COMPASS. The LNA provides 16.0 dB gain and 0.75 dB noise figure at a current consumption of 4.4 mA in the application configuration.The BGA231N7 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology.It operates from 1.5 V to 3.6 V supply voltage.

The BGA622L7 is a wide band low noise amplifier, based on Infineon Technologies’ Silicon Germanium Technology B7HF. The out-pin is simultaneously used for RF out and On/Off switch. This functionality can be accessed using a RF-Choke at the Out pin, where a DC level of 0 V or an open switches the device on and a DC level of VCC switches off, it provides an insertion loss of 26 dB together with a high IIP3 up to 24 dBm at GPS frequencies.

The BGA711N7 is a low current single-band low noise amplifier MMIC for UMTS bands I, IV and X. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in low profile TSNP-7-1 or TSNP-7-2 leadless green packages. Because the matching is off chip, the 2100 MHz path can be easily converted into a 1900 MHz path by optimizing the input and output matching network. This document specifies the electrical parameters, pinout, application circuit and packaging of the chip.

The BGA713L7 is a low current single-band low noise amplifier MMIC for UMTS bands XII, XIII, XIV, XVII and XX. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in a low profile TSNP-7-1 or TSNP-7-2 leadless green packages. This document specifies electrical parameters, pinout, application circuit and packaging of the chip.

The BGA735N16 is a highly flexible, high linearity tri-band (2600/2300/2100, 1900/1800, 900/800/700 MHz) low noise amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA735N16 uses an advanced biasing concept in order to achieve high linearity. The device features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection onchip as well as matching off chip. Because the matching is off chip, different LTE/UMTS bands can be easily applied. For example, the 1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing the input and output matching network.

The BGA751L7 is a low current single-band low noise amplifier MMIC for UMTS bands V, VI and VIII. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in a low profileTSNP-7-1 or TSNP-7-2 leadless green packages. Because the matching is off chip, the 800 MHz path can be easily converted into a 900 MHz path by optimizing the input and output matching network. This document specifies the electrical parameters, pinout, application circuit and packaging of the chip.

The BGA777L7 is a low current single-band low noise amplifier MMIC for UMTS bands 7, 38 and 40. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in a low profile TSNP-7-1 or TSNP-7-2 leadless green packages. This document specifies electrical parameters, pinout, application circuit and packaging of the chip. The device features dynamic gain control, temperature stabilization, standby mode and 2 kV ESD protection on-chip as well as matching off chip.