The BTT6200-4EMA is a 200 m ? quad channel Smart High-Side Power Switch, embedded in a PG-SSOP-24-14 EP , Exposed Pad package, providing protective functions and diagnosis. The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10W 24V or R5W 12V, as well as LEDs in the harsh automotive environment.

High side power switch with integrated vertical power FET, providing embedded protection and diagnostic functions.

The BTS5045-2EKA is a 45 mO dual channel Smart High-Side Power Switch, embedded in a PG-DSO-14-40 EP, Exposed Pad package, providing protective functions and diagnosis. The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 technology. It is specially designed to drive lamps up to 1 * P27W/P21W, as well as LEDs in the harsh automotive environment.

The BTS5045-1EJA is a 45 mO single channel Smart High-Side Power Switch, embedded in a PG-DSO-8-43 EP, Exposed Pad package, providing protective functions and diagnosis. The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 technology. It is specially designed to drive lamps up to 1 * P27W/P21W, as well as LEDs in the harsh automotive environment.

The BTS5030-1EJA is a 30 mO single channel Smart High-Side Power Switch, embedded in a PG-DSO-8-43 EP,< Exposed Pad package, providing protective functions and diagnosis. The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 technology. It is specially designed to drive lamps up to 2 * P21W, as well as LEDs in the harsh automotive environment.

High side power switch with integrated vertical power FET, providing embedded protection and diagnostic functions.

High side power switch with integrated vertical power FET, providing embedded protection and diagnostic functions.

The BTS50080-1TEA is a one channel high-side power switch in PG-TO252-5-11 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip technology. The BTS50080-1TEA has a current controlled input and offers a diagnostic feedback with load current sense and a defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown.

Embedded in a PG-TO252-5-11 package, the BTS50060-1TEA is a 6m? single Smart High-Side Power Switch. It is based on Smart power chip technology with P-channel vertical power MOFSET, providing protective and diagnostic functions. It is especially designed to drive loads in the harsh automotive environment.

High side power switch with integrated vertical power FET, providing embedded protection and diagnostic functions.