High side power switch with integrated vertical power FET, providing embedded protection and diagnostic functions.

High side power switch with integrated vertical power FET, providing embedded protection and diagnostic functions.

The BTS50080-1EGA is a single channel high-side power switch in PG-DSO-12-16 package providing embedded protective functions including ReverSaveTM and Infineon® INTELLIGENT LATCH. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart power chip on chip technology. The BTS50080-1EGA has ground referenced CMOS compatible inputs.

The BTS50080-1TEB is a one channel high-side power switch in PG-TO252-5-11 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip technology. The BTS50080-1TEB has a current controlled input and offers a diagnostic feedback with load current sense and a defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown.

The BTS50080-1TMA is a one channel high-side power switch in PG-TO220-7-4 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip technology. The BTS50080-1TMA has a current controlled input and offers a diagnostic feedback with load current sense and a defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown.

The BTS50080-1TMB is a one channel high-side power switch in PG-TO220-7-4 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip technology. The BTS50080-1TMA has a current controlled input and offers a diagnostic feedback with load current sense and a defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown.

The BTS50080-1TMC is a one channel high-side power switch in PG-TO220-7-4 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip technology. The BTS50080-1TMC has a current controlled input and offers a diagnostic feedback with load current sense and a defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown.

The BTS5010-1EKB is a 16 mO single channel Smart High-Side Power Switch, embedded in a PG-DSO-14-47 EP, Exposed Pad package, providing protective functions and diagnosis. The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 technology. It is specially designed to drive lamps up to H4, as well as LEDs in the harsh automotive environment.

The BTS5012-1EKB is a 12 mO single channel Smart High-Side Power Switch, embedded in a PG-DSO-14-47 EP, Exposed Pad package, providing protective functions and diagnosis. The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 technology. It is specially designed to drive lamps up to H4 / H7 or 3 x P27W + 2 x R5W, as well as LEDs in the harsh automotive environment.

The BTS5012SDA is a one channel high-side power switch in PG-TO252-5-11 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip technology. The BTS5012SDA has a current controlled input and offers a diagnostic feedback with load current sense and a defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown.