The BGB741L7ESD is a high performance low noise amplifier (LNA) MMIC based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) bipolar technology. Its integrated feedback provides a broadband pre-match to 50 O at input and output up to 3.5 GHz and improves the stability against parasitic oscillations. These measures simplify the design of arbitrary LNA application circuits. The integrated active biasing reduces the external parts count and stabilizes the bias current against temperature- and process-variations. The integrated protection elements make the device robust against electrostatic discharge (ESD) and high RF input power levels. The device is highly flexible because the bias current is adjustable and the device works with a broad supply voltage range. The BGB741L7ESD comes in a Pb-free and halogen-free low profile TSLP-7-1 package.

Si-MMIC-Amplifier in SIEGET® 25-Technologie

Si-MMIC-Amplifier in SIEGET® 25-Technologie

BGA612 is a broadband matched, general purpose MMIC amplifier in a Darlington configuration. It is optimized for a typical supply current of 20 mA.

BGA614 is a broadband matched, general purpose MMIC amplifier in a Darlington configuration. It is optimized for a typical supply current of 40 mA. The BGA614 is based on Infineon Technologies’ B7HF Silicon Germanium technology.

The BGA616 is a broadband matched general purpose MMIC amplifier in a Darlington configuration. It is optimized for a typical supply current of 60 mA. The BGA616 is based on Infineon Technologies’ B7HF Silicon Germanium technology.