The BGS14AN16 RF MOS switch is specifically designed for WCDMA diversity applications. Any of the 4 ports can be used as termination of the diversity antenna handling up to 30 dBm. This SP4T offers low insertion loss and high robustness against interferer signals at the antenna port and low harmonic generation in termination mode. An integrated LDO allows to connect Vdd directly to battery, hence no regulated supply voltage is required. A power down mode is implemented to avoid current drain when the device is not in use. The on-chip controller integrates CMOS logic and level shifters, driven by control inputs from 1.5 V to Vdd . Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGS14AN16 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 2.3 x 2.3 mm2 and a maximum height of 0.77 mm.

The BGS12SN6 RF MOS switch is specifically designed for WLAN and Bluetooth applications. Any of the 2 ports can be used as termination of the diversity antenna handling up to 30 dBm. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of 0.25 dB in the 1 GHz and 0.29 dB in the 2.5 GHz range.

The BGS12AL7-4 General Purpose RF MOS switch is designed to cover a broad range of applications from 30 MHz to 3 GHz. The symmetric design of its single pole double throw configuration offers high design flexibility. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level of 21 dBm, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of 0.4 dB in the 1 GHz and 0.5 dB in the 2 GHz range. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally.

The BGS12AL7-6 General Purpose RF MOS switch is designed to cover a broad range of applications from 30 MHz to 3 GHz. The symmetric design of its single pole double throw configuration offers high design flexibility. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level of 21 dBm, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of 0.4 dB in the 1 GHz and 0.5 dB in the 2 GHz range. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally.

The BGS16MN14 is a Single Pole Six Throw (SP6T) Diversity Switch Module optimized for wireless applications up to 2.7 GHz. It is a perfect solution for multi-mode handsets based on EDGE, WCDMA and LTE. The module comes in a miniature TSNP package and comprises of a high power CMOS SP6T switch with integrated MIPI RFFE interface.

The BGS18MN14 is a Single Pole Eight Throw (SP8T) Diversity Switch Module optimized for wireless applications up to 2.7 GHz. It is a perfect solution for multi-mode handsets based on quadband GSM, WCDMA and LTE. The module comes in a miniature TSNP package and comprises of a high power CMOS SP8T switch with integrated MIPI RFFE interface.

The BGS22WL10 is a DPDT (Dual-Pole / Double Throw) RF switch which combines two differential signals into one differential output or splits one differential signal into two separate differential lines. The parallel paths of the switch are controlled simultaneously through the same signals. The switch is designed to operate in battery powered applications with a supply voltage range of 2.4 - 3.6 V. The highly symmetric design ensures best phase- and amplitude accuracy. A typical application is to combine two Rx paths in a mobile cellular device after the Rx filters or duplexers into one input to the tranceiver IC. The IC can also be used for a wide variety of applications switching balanced signals in a frequency range of 0.1 - 3 GHz. The RF switch is packaged in a standard RoHS compliant TSLP-10-1 package with a small outline of only 1.55 x 1.15 mm2. No decoupling capacitors are required in typical applications as long as no DC is applied to any RF port.