The BGB707L7ESD is a Silicon Germanium Carbon (SiGe:C) low noise amplifier MMIC with integrated ESD protection and active biasing. The device is as flexible as a discrete transistor and features high gain, reduced power consumption and very low distortion for a very wide range of applications. The device is based upon Infineon Technologies cost effective SiGe:C technology and comes in a low profile TSLP-7-1 leadless green package

BGA416 is a monolithic silicon cascade amplifier with high reverse isolation. A bias network is integrated for simplified biasing.

The BGA748L16 is a highly flexible, high linearity quad-band (2100, 1900, 900, 800 MHz) low noise amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA748L16 uses an advanced biasing concept in order to achieve high linearity. The device features dynamic gain control, temperature stabilization, standby mode and 2 kV ESD protection on-chip as well as matching off chip. Because the matching is off chip, different UMTS bands can be easily applied.